LM386N-1 [Wing Shing]

Low Voltage Audio Power Amplifier(Low Voltage Audio Power Amplifier); 低电压音频功率放大器(低电压音频功率放大器)
LM386N-1
型号: LM386N-1
厂家: WING SHING COMPUTER COMPONENTS    WING SHING COMPUTER COMPONENTS
描述:

Low Voltage Audio Power Amplifier(Low Voltage Audio Power Amplifier)
低电压音频功率放大器(低电压音频功率放大器)

商用集成电路 放大器 功率放大器 光电二极管
文件: 总8页 (文件大小:341K)
中文:  中文翻译
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Low Voltage  
LM386-1  
Audio Power Amplifier  
Low Voltage Audio Power Amplifier  
General Description  
Features  
n Battery operation  
is a power amplifier designed for use in low volt-  
The LM386-1  
age consumer applications. The gain is internally set to 20 to  
keep external part count low, but the addition of an external  
resistor and capacitor between pins 1 and 8 will increase the  
gain to any value from 20 to 200.  
n Minimum external parts  
n Wide supply voltage range: 4V–12V  
n Low quiescent current drain: 4mA  
n Voltage gains from 20 to 200  
The inputs are ground referenced while the output automati-  
cally biases to one-half the supply voltage. The quiescent  
power drain is only 24 milliwatts when operating from a 6 volt  
n Ground referenced input  
n Self-centering output quiescent voltage  
n Low distortion: 0.2% (AV = 20, VS = 6V, RL = 8, PO  
125mW, f = 1kHz)  
=
supply, making the  
WS386M-1 ideal for battery operation  
n Available in 8 pin SOP package and DIP package  
Ordering Information  
Applications  
n AM-FM radio amplifiers  
n Portable tape player amplifiers  
n Intercoms  
n TV sound systems  
n Line drivers  
PART NO.  
LM386M-1  
LM386N-1  
PACKAGE  
SOP-8  
DIP-8  
n Ultrasonic drivers  
n Small servo drivers  
n Power converters  
Equivalent Schematic and Connection Diagrams  
Small Outline,  
Dual in Line Package  
Pin Connection  
Wing Shing Computer Components Co., (H.K.)Ltd.  
Homepage: http://www.wingshing.com  
Tel:(852)2341 9276 Fax:(852)2797 8153  
E-mail: wsccltd@hkstar.com  
8-1  
LM386-1  
Soldering Information  
Dual-In-Line Package  
Soldering (10 sec)  
Small Outline Package  
(SOIC )  
Absolute Maximum Ratings  
+260˚C  
Supply Voltage  
(WS386-1)  
15V  
Package Dissipation(Note3)  
(WS386N)  
Vapor Phase (60 sec)  
Infrared (15 sec)  
+215˚C  
+220˚C  
1.25W  
0.73W  
(WS386M)  
+
Input Voltage  
.4V  
-
-
Storage Temperature  
65 C to +150 C  
0 C to+70 C  
+150 C  
Operating Temperature  
Junction Temperature  
Electrical Characteristics (Notes 1, 2)  
,Vcc=6V,R =8 ,f=1KH , unless otherwise specified  
Z
TA = 25˚C  
Parameter  
Conditions  
Min  
Typ  
Max  
Units  
Operating Supply Voltage (VS)  
V
12  
4
Quiescent Current (IQ)  
VS = 6V, VIN = 0  
4
8
mA  
Output Power (POUT  
)
= 6V, RL = 8, THD = 10%  
250  
325  
mW  
V
S
V s = 9V,RL =8 , THD =10%  
700  
50  
Vs = 6V,10uF from Pin 1 to 8  
Bandwidth (BW)  
60  
kHz  
dB  
Voltage Gain (AV)  
VS = 6V, f = 1 kHz  
26  
46  
Pins 1 and 8 Open  
10 µF from Pin 1 to 8  
dB  
Bandwidth (BW)  
VS = 6V, Pins 1 and 8 Open  
300  
0.2  
kHz  
%
Total Harmonic Distortion (THD)  
VS = 6V, RL = 8, POUT = 125 mW  
f = 1 kHz, Pins 1 and 8 Open  
Power Supply Rejection Ratio (PSRR)  
VS = 6V, f = 1 kHz, CBYPASS = 10 µF  
Pins 1 and 8 Open, Referred to Output  
50  
dB  
Input Resistance (RIN  
)
50  
kΩ  
Input Bias Current (IBIAS  
)
VS = 6V, Pins 2 and 3 Open  
250  
nA  
Note 1: All voltages are measured with respect to the ground pin, unless otherwise specified.  
Note 2: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is func-  
tional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which guar-  
antee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit is  
given, however, the typical value is a good indication of device performance.  
Note 3: For operation in ambient temperatures above 25˚C, the device must be derated based on a 150˚C maximum junction temperature and  
a thermal resistance of 170˚C/W for the small outline package.  
8-2  
LM386-1  
Application Hints  
GAIN CONTROL  
INPUT BIASING  
a more versatile amplifier, two pins (1  
The schematic shows that both inputs are biased to ground  
with a 50 kresistor. The base current of the input transis-  
tors is about 250 nA, so the inputs are at about 12.5 mV  
when left open. If the dc source resistance driving the LM386  
is higher than 250 kit will contribute very little additional  
offset (about 2.5 mV at the input, 50 mV at the output). If the  
dc source resistance is less than 10 k, then shorting the  
unused input to ground will keep the offset low (about 2.5 mV  
at the input, 50 mV at the output). For dc source resistances  
between these values we can eliminate excess offset by put-  
ting a resistor from the unused input to ground, equal in  
value to the dc source resistance. Of course all offset prob-  
lems are eliminated if the input is capacitively coupled.  
To make LM386-1  
and 8) are provided for gain control. With pins 1 and 8 open  
the 1.35 kresistor sets the gain at 20 (26 dB). If a capacitor  
is put from pin 1 to 8, bypassing the 1.35 kresistor, the  
gain will go up to 200 (46 dB). If a resistor is placed in series  
with the capacitor, the gain can be set to any value from 20  
to 200. Gain control can also be done by capacitively cou-  
pling a resistor (or FET) from pin 1 to ground.  
Additional external components can be placed in parallel  
with the internal feedback resistors to tailor the gain and fre-  
quency response for individual applications. For example,  
we can compensate poor speaker bass response by fre-  
quency shaping the feedback path. This is done with a series  
RC from pin 1 to 5 (paralleling the internal 15 kresistor).  
For 6 dB effective bass boost: R . 15 k, the lowest value  
for good stable operation is R = 10 kif pin 8 is open. If pins  
1 and 8 are bypassed then R as low as 2 kcan be used.  
This restriction is because the amplifier is only compensated  
for closed-loop gains greater than 9.  
with higher gains (bypassing the  
When using LM386-1  
1.35 kresistor between pins 1 and 8) it is necessary to by-  
pass the unused input, preventing degradation of gain and  
possible instabilities. This is done with a 0.1 µF capacitor or  
a short to ground depending on the dc source resistance on  
the driven input.  
Pad Location  
8
7
6
90  
1
90  
5
2
3
4B  
4A  
Y
X
0
Chip size 1.4 x 1.6 mm  
Pad Location Coordinates  
Coordinates  
Pad N  
Pad Name  
X
Y
1
2
3
4A  
4B  
5
6
7
8
Gain  
-input  
+input  
GND  
GND  
VOUT  
VCC  
BYPASS  
Gain  
120  
120  
120  
550  
600  
600  
750  
440  
120  
975  
665  
100  
100  
390  
1015  
1405  
1405  
1405  
8-3  
LM386-1  
Typical Performance Characteristics  
Power Supply Rejection Ratio  
(Referred to the Output)  
vs Frequency  
Quiescent Supply Current  
vs Supply Voltage  
Peak-to-Peak Output Voltage  
Swing vs Supply Voltage  
Distortion vs Frequency  
Voltage Gain vs Frequency  
Distortion vs Output Power  
Device Dissipation vs Output  
Power4Load  
Device Dissipation vs Output  
Power8Load  
Device Dissipation vs Output  
Power16Load  
8-4  
LM386-1  
Typical Applications  
Amplifier with Gain = 200  
Amplifier with Gain = 20  
Minimum Parts  
Low Distortion Power Wienbridge Oscillator  
Amplifier with Gain = 50  
Square Wave Oscillator  
Amplifier with Bass Boost  
8-5  
LM386-1  
Typical Applications (Continued)  
Frequency Response with Bass Boost  
AM Radio Power Amplifier  
Note 4: Twist Supply lead and supply ground very tightly.  
Note 5: Twist speaker lead and ground very tightly.  
Note 6: Ferrite bead in Ferroxcube K5-001-001/3B with 3 turns of wire.  
Note 7: R1C1 band limits input signals.  
Note 8: All components must be spaced very closely to IC.  
8-6  
Physical Dimensions inches (millimeters) unless otherwise noted (Continued)  
Dual-In-Line Package  
LM386N-1  
8-7  
LM386-1  
Physical Dimensions inches (millimeters) unless otherwise noted  
SO Package  
LM386M-1  
8-8  

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